BS270 数据手册
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BS270 10 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi BS270
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 625mW
- Input Capacitance (Ciss@Vds): 50pF@25V
- Continuous Drain Current (Id): 400mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@500mA,10V
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number: BS270
- detail: N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3